FSB50550UTD【PDF 4/10 页】MOD SPM 500V 2A SPM23-ED

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Electrical Characteristics (T J = 25°C, V CC = V BS = 15 V unless otherwise specified.)

Inverter Part (each MOSFET unless otherwise specified.)

Symbol

Parameter

Conditions

Min Typ Max

Unit

BV DSS

? BV DSS /

? T J

I DSS

R DS(on)

V SD

t ON

t OFF

t rr

E ON

E OFF

Drain - Source

Breakdown Voltage

Breakdown Voltage Tem-

perature Coefficient

Zero Gate Voltage

Drain Current

Static Drain - Source

Turn-On Resistance

Drain - Source Diode

Forward Voltage

Switching Times

V IN = 0 V, I D = 250 ? A (2nd Note 1)

I D = 250 ? A, Referenced to 25°C

V IN = 0 V, V DS = 500 V

V CC = V BS = 15 V, V IN = 5 V, I D = 0.5 A

V CC = V BS = 15V, V IN = 0 V, I D = -0.5 A

V PN = 300 V, V CC = V BS = 15 V, I D = 0.5 A

V IN = 0 V ? 5 V, Inductive Load L = 3 mH

High- and Low-Side MOSFET Switching

(2nd Note 2)

500

-

-

-

-

-

-

-

-

-

-

0.53

-

1.0

-

600

500

100

60

10

-

-

250

1.4

1.2

-

-

-

-

-

V

V

? A

?

V

ns

ns

ns

? J

? J

RBSOA

Reverse Bias Safe Oper-

ating Area

V PN = 400 V, V CC = V BS = 15 V, I D = I DP , V DS = BV DSS ,

T J = 150°C

High- and Low-Side MOSFET Switching (2nd Note 3)

Full Square

Control Part (each HVIC unless otherwise specified.)

Symbol

Parameter

Conditions

Min Typ Max

Unit

I QCC

I QBS

Quiescent V CC Current

Quiescent V BS Current

V CC = 15 V,

V IN = 0 V

V BS = 15 V,

V IN = 0 V

Applied Between V CC and COM

Applied Between V B(U) - U,

V B(V) - V, V B(W) - W

-

-

-

-

160

100

? A

? A

UV CCD

UV CCR

UV BSD

UV BSR

Low-Side Under-Voltage

Protection (Figure 8)

High-Side Under-Voltage

Protection (Figure 9)

V CC Under-Voltage Protection Detection Level

V CC Under-Voltage Protection Reset Level

V BS Under-Voltage Protection Detection Level

V BS Under-Voltage Protection Reset Level

7.4

8.0

7.4

8.0

8.0

8.9

8.0

8.9

9.4

9.8

9.4

9.8

V

V

V

V

V IH

V IL

I IH

I IL

ON Threshold Voltage

OFF Threshold Voltage

Input Bias Current

Logic High Level

Logic Low Level

V IN = 5V

V IN = 0V

Applied between IN and COM

Applied between IN and COM

2.9

-

-

-

-

-

10

-

-

0.8

20

2

V

V

? A

? A

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

Symbol

Parameter

Conditions

Min Typ Max

Unit

V FB

t rrB

Forward Voltage

Reverse Recovery Time

I F = 0.1 A, T C = 25°C (2nd Note 5)

I F = 0.1 A, T C = 25°C

-

-

2.0

80

-

-

V

ns

2nd Notes:

1. BV DSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM ? 5 product. V PN should be sufficiently less than this

value considering the effect of the stray inductance so that V PN should not exceed BV DSS in any case.

2. t ON and t OFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field

applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.

3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test

circuit that is same as the switching test circuit.

4. Built-in bootstrap diode includes around 15 ? resistance characteristic. Please refer to Figure 2.

?2010 Fairchild Semiconductor Corporation

FSB50550UTD Rev. C4

4

www.fairchildsemi.com

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